Molecular Electronics: STM Break junction Experiments for Chiral/Magnetic Molecules
Advanced magnetic devices play a fundamental role in the realization of future technologies and therefore in society’s welfare. One realistic option for replacing silicon technologies involves the development of new magnetic memristors (neuromorphic computing), spin-transfer torque (STT), and spin-orbit torque (SOT) devices based on magnetoresistive spintronic devices. The first goal is to establish a well-defined route map for operationalizing the room-temperature magnetoresistance effect of spintronic devices at a nanoscopic level by relying on single chiral and/or magnetic molecules . Scanning Tunneling Microscopy (STM) experiments are crucial for determining the conductance values of single molecules or layers. Our research focused on developing efficient room-temperature magnetoresistance molecular-based devices using magnetic molecules, and we were the first to report this property (Nano Letters 2016, 16, 218; JACS 2017, 139, 5768). In these cases, the STM devices have only one magnetic electrode, unlike the usual two in spin valve devices. Thus, we can simplify the magnetoresistance devices. Our goal is to measure new magnetic and chiral molecules to improve the efficiency of magnetoresistance devices. This project will focus in new chiral/magnetic molecules and to determine the single-molecule conductance and magnoresistance effects by using break junction STM.
