The postdoctoral researcher will work within PaNeTONE, a project focused on
developing a new generation of memristive devices for analogue and in-memory
computing. The research explores how device geometry and materials engineering can
be used as design parameters to achieve improved stability, reproducibility and energy
efficiency in oxide-based nanoelectronic devices.
The work combines nanofabrication, electrical characterization and device physics to
understand and control behaviour at the nanoscale. The project addresses emerging
applications in neuromorphic hardware, edge AI and hardware security, and offers the
opportunity to work in a collaborative environment with access to advanced cleanroom
and characterization facilities.
IMB-CNM is the largest institute in Spain dedicated to research and development of
Micro and Nanotechnology and microsystems, with unique capabilities in silicon
technology. It belongs to CSIC since its foundation in 1985 and is distinguished with the
AEI María de Maeztu Unit of Excellence accreditation.
The main activities of IMB-CNM are basic and applied research and development, as well
as education and training in micro and nanotechnologies, components and systems. Its
mission is to improve knowledge and contribute to the development of technology-
based solutions to address societal challenges.
Key Responsibilities
Fabrication and processing of nanoscale electronic devices using cleanroom
micro- and nanofabrication techniques.
Electrical characterization of devices, including DC and pulsed measurements,
statistical analysis, and long-term stability tests.
Analysis of device behaviour in relation to material properties, nanostructure
and defects.
Participation in correlative studies combining electrical data with nanoscale
structural or chemical characterization (in-house and through collaborations).
Contribution to scientific publications and presentations at international
conferences.
The postdoctoral researcher is expected to work autonomously in the laboratory, while
interacting closely with the rest of the team.
Required skills
PhD in Physics, Materials Science, Nanotechnology, Microelectronics, or a
closely related field.
Hands-on experience with cleanroom processing (thin films, ALD, EBL,
lithography, etching).
Experience in nanoelectronic or microelectronic device fabrication.
Institute of Microelectronics of Barcelona IMB-CNM (CSIC)
Carrer dels Til·lers s.n., Campus UAB | 08193, Cerdanyola del Vallès
www.imb-cnm.csic.es
+34 93 594 7700
Strong experimental background and interest in device physics.
Ability to work independently and as part of a collaborative team.
Good written and oral communication skills in English.
Preferred Experience
Oxide-based electronic devices (e.g., memristive devices or related resistive
switching technologies).
Electrical characterization, including DC and pulsed measurements.
Variability, reliability, and noise analysis.
Nanoscale characterization techniques (AFM, c-AFM, SEM/TEM).
Layout design tools (KLayout, Cadence).
Device simulation (TCAD).
Software development for electrical measurements (Python, MATLAB, C++).
Job conditions
Full-time postdoctoral contract (full time, 40 hours/week) for two years.
Gross salary: 49,062.72 €/year (Doctor FC2 level, according to CSIC salary scales).
On site work, with the possibility of teleworking and flexible schedule.
Estimated start date: September - October 2026
How to apply
Applications should be sent by email to: m.f.regulez@csic.es and
mireia.bargallo.gonzalez@csic.es
Please include “Postdoctoral researcher in Memristive Devices” as the subject of the
message and attach:
A brief statement of research experience and interest.
Two recommendation letters.
An updated CV.
Submitting the application implies consent to the Legal Advice | IMB CNM (csic.es).
Deadline for applications: 15/06/2026.
This offer can be found on: https://www.imb-cnm.csic.es/en/about-
center/careers/open-positions.
More information on IMB-CNM: https://www.imb-cnm.csic.es/en/